Resistive Switching Property of Ag/Aloe-Vera/Al device

Abstract

We report on resistive switching property of aloe vera sandwiched between two electrodes. The novelty of our study lies in the use on silver and aluminum electrode combination which makes our device different from the ones already reported in the literature. The reported device showed switching and very low (0.1 V) voltage. Furthermore, multilevel switching was also observed only in the negative voltage bias. In the same negative bias, the system also exhibited a combination of threshold and bipolar memory switching. The conduction mechanism analysis showed that conduction filament formed due to voltage induced degradation of the aloe vera active layer take place leading to the resistive switching. Overall, resistive switching memory based on aloe vera shows strong electrode dependence, and thus careful consideration of electrode combination is needed to optimize this device.