GA-N Based High Electron Mobility Transistors for Enhanced Power Amplification in 5G Networks

Abstract

Fifth-generation (5G) network deployment necessitates the use of cutting-edge power amplification technology that can handle high frequencies and power levels more effectively. In this context, Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become a crucial enabling technology, providing notable benefits above conventional Silicon-based transistors. The design, performance measurements, and integration problems of GaN HEMTs for higher power amplification in 5G networks are the main topics of this paper's thorough research. GaN HEMTs' remarkable power density, frequency responsiveness, and thermal management are made possible by their broad bandgap, high electron mobility, and high breakdown voltage. This makes them perfect for the many and rigorous needs of 5G applications.

The design and fabrication processes of GaN HEMTs are examined in the first section of the study, along with the material characteristics that enhance their outstanding performance. Next, with an emphasis on their use in 5G networks, it explores the specific performance parameters of GaN HEMTs, such as power efficiency, frequency responsiveness, and thermal management. We explore the difficulties and solutions pertaining to circuit design, packaging, and system-level optimisations when integrating GaN HEMTs into 5G power amplifiers.

The study concludes by discussing the possible uses of GaN HEMTs in developing 6G networks as well as the future scope of these devices in wireless communication. The results highlight how crucial GaN HEMTs are to improving 5G network performance and efficiency and pave the way for further advancements in high-frequency, high-power wireless communication technologies.